2SC2482. C2482 Datasheet

C2482 2SC2482. Datasheet pdf. Equivalent

C2482 Datasheet
Recommendation C2482 Datasheet
Part C2482
Description 2SC2482
Feature C2482; www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Manufacture Toshiba Semiconductor
Datasheet
Download C2482 Datasheet





Toshiba Semiconductor C2482
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2482
High-Voltage Switching and Amplifier Applications
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
2SC2482
Unit: mm
High breakdown voltage: VCEO = 300 V
Small collector output capacitance: Cob = 3.0 pF (typ.)
Recommended for chroma output and driver applications for
line-operated TV horizontal.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
300
300
7
100
50
900
150
55 to 150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
Test Condition
VCB = 240 V, IE = 0
VEB = 7 V, IC = 0
VCE = 10 V, IC = 4 mA
VCE = 10 V, IC = 20 mA
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCE = 10 V, IC = 20 mA
VCB = 20 V, IE = 0, f = 1 MHz
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
― ― 1.0 µA
― ― 1.0 µA
20 ― ―
30 150
― ― 1.0 V
― ― 1.0 V
50 ― ― MHz
3.0 pF
Marking
C2482
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26



Toshiba Semiconductor C2482
120
100
80
60
40
20
0
0
IC – VCE
6
4
Common emitter
Ta = 25°C
32
1
0.6
0.4
IB = 0.2 mA
4 8 12 16 20
Collector-emitter voltage VCE (V)
0
24
2SC2482
1000
500
300
100
50
30
10
5
0.3
hFE – IC
Common emitter
Ta = 25°C
VCE = 20 V
10
5
1 3 10 30
Collector current IC (mA)
100
1000
500
300
100
50
30
10
5
0.3
hFE – IC
Common emitter
VCE = 10 V
Ta = 100°C
25 25
1 3 10 30
Collector current IC (mA)
100
10
5
3
1
0.5
0.3
0.1
0.05
0.3
VCE (sat) – IC
Common emitter
Ta = 25°C
IC/IB = 10
5
2
1 3 10 30
Collector current IC (mA)
100
10
5
3
1
0.5
0.3
0.1
0.05
0.3
VCE (sat) – IC
Common emitter
IC/IB = 5
Ta = 100°C
25 25
1 3 10 30
Collector current IC (mA)
100
10
5
3
1
0.5
0.3
0.0
0.05
0.3
VBE (sat) – IC
Common emitter
IC/IB = 5
Ta = 25°C
1 3 10 30
Collector current IC (mA)
100
2 2004-07-26



Toshiba Semiconductor C2482
100
Common emitter
VCE = 10 V
80
IC – VBE
60
Ta = 100°C 25
25
40
20
0
0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
Cob – VCB
100
IE = 0
50 f = 1 MHz
Ta = 25°C
30
10
5
3
1
0.5
0.3
1 3 10 30
Collector-base voltage VCB (V)
100
2SC2482
1000
500
300
100
50
30
10
5
0.3
fT – IC
Common emitter
Ta = 25°C
VCE = 20 V
5 10
1 3 10 30
Collector current IC (mA)
100
Safe Operating Area
300
IC max (pulsed)*
300 µs*
IC max (continuous)
100
1 ms
10 ms*
100 ms*
50 500 ms*
30
DC operation
Ta = 25°C
10
*: Single nonrepetitive pulse
5 Ta = 25°C
Curves must be derated linearly with
increase in temperature.
2
3 10 30
VCE max
100 300
Collector-emitter voltage VCE (V)
3 2004-07-26





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