PROTON – ELECTROTEX
RUSSIA
Optimum power handling Low on-state and switching losses Designed for traction and industrial applications
Phase Control Thyristor Type Т143-500
ITAV VDRM VRRM tq 500 A 400 ÷ 1600 V 160; 250; 500 µs 1000 10 – 60 ÷ 125 1200 12 1400 14 1600 16
Mean on-state current Repetitive peak off-state voltage Repetitive peak reverse voltage Turn-off time
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VDRM, VRRM, V Voltage code Tj, °C
400 4
600 6
800 8
MAXIMUM ALLOWABLE RATINGS
Symbols and parameters ON-STATE ITAV ITRMS ITSM I2t BLOCKING VDRM, VRRM Repetitive peak off-state and Repetitive peak reverse voltages Non-repetitive peak off-state and Non-repetitive peak reverse voltages V 400÷1600 Tj=Tj max; 180° half-sine wave, 50 Hz; Gate open Tj= Tj max; 180° half-sine wave, 50 Hz, single pulse Gate open Tj=Tj max; Gate open Tj=Tj max Tj=Tj max Tj=Tj max Tj=Tj max; VD=0.67.VDRM; ITM≤2IT(AV); Gate pulse: 20 V, 5 Ω, 1 µs rise time, 50 µs Mean on-state current RMS on-state current Surge on-state current Circuit fusing considerations A A kA A2s.103 500 1160 11.0 12.0 605 720 Tc=94 °C; 180° half-sine wave, 50 Hz Tc=94 °C; Full cycle sine wave, 50 Hz 180° half-sine wave, 50 Hz, Tj=Tj max single pulse; Tj=25°C VR=0 V; Tj=Tj max Gate pulse: 20 V, 5 Ω, Tj=25°C 1 µs rise time, 50 µs Units Values Test conditions
VDSM, VRSM
V
450÷1800 0.75.VDRM 0.75.VRRM 40 6 5
Direct off-state and Direct reverse voltages TRIGGERING PGM Peak gate power dissipation PG(AV) Mean gate power dissipation VRGM Peak gate reverse voltage SWITCHING Critical rate of rise of on-state current: (diT/dt)crit non-repetitive repetitive THERMAL Tstg Storage temperature VD, VR Tj Junction temperature
V W W V
A/µs
200 100 – 60 ÷ 50 – 60 ÷ 125
°C °C
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T143-500
Rev 26/01/2004
CHARACTERISTICS
Symbols and parameters ON-STATE VTM VT(TO) rT IL IH BLOCKING IDRM, IRRM
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Units V V mΩ mA mA
Values 1.80 1.10 0.57 700 300
Conditions Tj=25°C; ITM=3.14.ITAV Tj=Tj max Tj=Tj max Tj=25°C; VD=12 V; Gate pulse: 20 V, 5 Ω, 1 µs rise time, 50 µs Tj=25°C; VD=12 V; Gate open Tj=Tj max; VD=VDRM; VR=VRRM Tj=Tj max; VD=0.67.VDRM; Gate open Tj=25°C; VD=12 V; Direct gate current Tj=Tj max; VD=0.67.VDRM; Direct gate current Tj=25°C; VD=100 V; ITM=ITAV; Gate pulse: 20 V, 5Ω, 1 µs rise time, 50 µs Tj=Tj max; ITM=ITAV; diR/dt=5 A/µs; VR=100 V; VD=0.67 VDRM; dVD/dt=50 V/µs Tj=Tj max; ITM=ITAV; diR/dt=5 A/µs; VR=100 V; Direct current, double side cooled
Peak on-state voltage On-state threshold voltage On-state slope resistance Latching current Holding current Repetitive peak off-state and repetitive peak reverse currents Critical rate of rise of off-state voltage1) trigger direct voltage trigger direct current non-trigger direct voltage non-trigger direct current
mA V/µs
30 200 1600 3.50 0.25 0. 5 10.0 25.0 7.0 160 250 500 1500 30.0 0.034
(dVD/dt)crit
TRIGGERING VGT Gate IGT Gate VGD Gate IGD Gate SWITCHING tgt tgd tq Qrr trr THERMAL Rthjc
V A V mA µs µs
Turn-on time Delay time Turn-off time
2)
µs µC µs °C/W
Recovered charge Reverse recovery time Thermal resistance junction to case
Note: 1) Critical rate of rise of off-state voltage Symbol of group P2 K2 E2 A2 320 500 1000 200 (dVD/dt)crit, V/µs OVERALL DIMENSIONS
3,5 h1.5+0.2 +0,2
2)
T1 1600
Turn-off time Symbol of group T2 M2 160 250 tq, µs PART NUMBERING GUIDE T 1 1. 2. 3. 4. 5. 6. 7. 143 2 500 3 16 4 T1 5 T2 6
E2 500
60 max 37+2 -
N 7
20+1 -
37+2 300+30 -
4,3 2 holes
+0,18
Thyristor Design version Mean on-state current, A Voltage code Critical rate of rise of off-state voltage Group of turn-off time Ambient conditions: N – normal; T – tropical
10 0 + 15
0
Weight: 260 grams Mounting force: 13.5 ÷ 16.5 kN Recommended heatsink: O143; O243; O343
Page 2 of 2 T143-500 Rev 26/01/2004
Fig 1 On-state characteristics
Fig 2 Maximum allowable mean on-state current ITAV vs. case temperature TC for sinusoidal current waveforms, f=50 Hz
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Fig 3 Maximum allowable mean on-state current ITAV vs. case temperature TC for rectangular current waveforms and for DC, f=50Hz
Fig 4 On-state power dissipation PTAV vs. mean on-state current ITAV for sinusoidal current waveforms at different conduction angles,f=50Hz
Fig 5 On-state power dissipation PTAV vs. mean on-state current ITAV for rectangular current waveforms and for DC at different conduction angles, f=50Hz
8
Fig 6 Transient thermal impedance junction to case Zth(jc)
UFGM,B
7 6 4 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 1 2 3
Position (See Fig. 7) 1 2 3 4
IFGM,A
On-Off time ratio 1 2 20 40
Gate pulse length, ms DC 10 1 0,5
Gate Pulse Power, W 6 8 20 40
Fig 7 Max. peak gate power loss:
J.S.C. “PROTON–ELECTROTEX” 19 Leskova, 302027, Orel RUSSIA, Fax : +7 (0862) 41 00 56 Phones : +7 (0862) 43 41 39 / 43 41 40 E-mail:
[email protected] /
[email protected]
Page 3 of 3 T143-500 Rev 26/01/2004
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