C4115E

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR C WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B www.DataSheet4U.com 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E B CFQ B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Storage Temperature Value 40 20 6 3 150 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage* Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 290 25 V MHz pF TYP MAX UNIT V V V µA µA IC= 50µA , IE=0 IC= 1mA , IB=0 IE=50µA, IC=0 VCB=30V , VCE=2 V, IE=0 IC= 0.1A VEB= 5V , IC=0 IC= 2A, IB=0.1A VCE=2V, IC=0.5 A f=100MHz VCB=10V,IE=0,f=1MHz R 180-390 fT Cobo Q 120-270 CLASSIFICATION OF ...