Document
2SC4115S
Transistors
Low Frequency Transistor (20V, 3A)
2SC4115S
zFeatures 1) Low VCE(sat). www.DataSheet4U.com VCE(sat) = 0.2V(Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zExternal dimensions (Unit : mm)
2SC4115S
4±0.2 2±0.2
3±0.2
(15Min.)
0.15 0.45+ −0.05
zStructure Epitaxial planar type NPN silicon transistor
3Min.
0.4 2.5 + −0.1 5
0.5
0.15 0.45 + −0.05
(1) (2) (3)
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 40 20 6 2 5 0.4 150 −55 to +150
Unit V V V A (DC) A (Pulse) ∗ W
°C °C
∗
Single pulse Pw=10ms
Rev.A
1/3
2SC4115S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage www.DataSheet4U.comDC current transfer ratio Transition frequency Output capacitance
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 40 20 6 − − − 120 − −
Typ. − − − − − 0.2 − 290 25
Max. − − − 0.1 0.1 0.5 390 − −
Unit V V V IC=50µA IC=1mA IE=50µA VCB=30V VEB=5V
Conditions
µA µA
V − MHz pF
IC/IB=2A/0.1A VCE=2V, IC=0.1A VCE=2V, IE= −0.5A, f=100MHz VCE=10V, IE=0A, f=1MHz
∗
∗ Measured using pulse current.
zPackaging specifications and hFE
Package Code Type 2SC4115S hFE QRS Basic ordering unit (pieces) Taping TP 5000
hFE values are classified as follows :
Item hFE Q 120 to 270 R 180 to 390 S 270 to 560
zElectrical characteristic curves
10 5
COLLECTOR CURRENT : IC (A)
VCE=2V
2
2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
1.6
20mA 18mA 16mA 14mA
Ta=25°C 12mA 10mA 8mA
6mA
5
50mA 45mA 40mA
4
Ta=25°C 35mA 30mA 25mA 20mA 15mA 10mA
Ta=100°C 25°C −40°C
1.2
3
4mA
0.8
2 5mA 1 IB=0A 1 2 3 4 5
2mA
0.4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0
0.2
0.4
0.6
0.8
IB=0A 1.0
0 0
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter propagation characteristics
Fig.2
Grounded emitter output characteristics ( )
Fig.3
Grounded emitter output characteristics ( )
Rev.A
2/3
2SC4115S
Transistors
5000 2000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=2V Ta=100°C 25°C −40°C
2 1 0.5 0.2 0.1 50m 20m 10m 5m
IC/IB=10
1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m
lC/lB=20
DC CURRENT GAIN : hFE
1000 500 200 100 50 20 10
Ta=100°C 25°C −40°C
Ta=100°C 25°C −40°C
www.DataSheet4U.com
5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2
5 10
2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A)
5 10
1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A)
5 10
COLLECTOR CURRENT : IC (A)
Fig.4
DC current gain vs. collector current
Fig.5
Collector-emitter saturation voltage vs. collector current ( )
Fig.6
Collector-emitter saturation voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=20
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
2 1 0.5 0.2 0.1 50m 20m 10m 5m
1000
TRANSITION FREQUENCY : fT (MHz)
500 200 100 50 20 10 5 2 1 −1
−2
Ta=25°C VCE=2V
1000 500
Ta=25°C f=1MHz IE=0A IC=0A
200 100
Cob
Ta=100°C 25°C −40°C
Cob
50
20 10 0.1 0.2
2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A)
5 10
−5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA)
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7
Collector-emitter saturation voltage vs. collector current ( )
Fig.8
Gain bandwidth product vs. emitter current
Fig.9
Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be fr.