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C4115S Dataheets PDF



Part Number C4115S
Manufacturers Jiangsu Changjiang Electronics
Logo Jiangsu Changjiang Electronics
Description 2SC4115S
Datasheet C4115S DatasheetC4115S Datasheet (PDF)

2SC4115S Transistors Low Frequency Transistor (20V, 3A) 2SC4115S zFeatures 1) Low VCE(sat). www.DataSheet4U.com VCE(sat) = 0.2V(Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zExternal dimensions (Unit : mm) 2SC4115S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 zStructure Epitaxial planar type NPN silicon transistor 3Min. 0.4 2.5 + −0.1 5 0.5 0.15 0.45 + −0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗.

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2SC4115S Transistors Low Frequency Transistor (20V, 3A) 2SC4115S zFeatures 1) Low VCE(sat). www.DataSheet4U.com VCE(sat) = 0.2V(Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zExternal dimensions (Unit : mm) 2SC4115S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 zStructure Epitaxial planar type NPN silicon transistor 3Min. 0.4 2.5 + −0.1 5 0.5 0.15 0.45 + −0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 20 6 2 5 0.4 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗ W °C °C ∗ Single pulse Pw=10ms Rev.A 1/3 2SC4115S Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage www.DataSheet4U.comDC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 40 20 6 − − − 120 − − Typ. − − − − − 0.2 − 290 25 Max. − − − 0.1 0.1 0.5 390 − − Unit V V V IC=50µA IC=1mA IE=50µA VCB=30V VEB=5V Conditions µA µA V − MHz pF IC/IB=2A/0.1A VCE=2V, IC=0.1A VCE=2V, IE= −0.5A, f=100MHz VCE=10V, IE=0A, f=1MHz ∗ ∗ Measured using pulse current. zPackaging specifications and hFE Package Code Type 2SC4115S hFE QRS Basic ordering unit (pieces) Taping TP 5000 hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 S 270 to 560 zElectrical characteristic curves 10 5 COLLECTOR CURRENT : IC (A) VCE=2V 2 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.6 20mA 18mA 16mA 14mA Ta=25°C 12mA 10mA 8mA 6mA 5 50mA 45mA 40mA 4 Ta=25°C 35mA 30mA 25mA 20mA 15mA 10mA Ta=100°C 25°C −40°C 1.2 3 4mA 0.8 2 5mA 1 IB=0A 1 2 3 4 5 2mA 0.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.2 0.4 0.6 0.8 IB=0A 1.0 0 0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) Rev.A 2/3 2SC4115S Transistors 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V Ta=100°C 25°C −40°C 2 1 0.5 0.2 0.1 50m 20m 10m 5m IC/IB=10 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m lC/lB=20 DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 Ta=100°C 25°C −40°C Ta=100°C 25°C −40°C www.DataSheet4U.com 5 1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 5 10 2m 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 1m 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=20 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2 1 0.5 0.2 0.1 50m 20m 10m 5m 1000 TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 −1 −2 Ta=25°C VCE=2V 1000 500 Ta=25°C f=1MHz IE=0A IC=0A 200 100 Cob Ta=100°C 25°C −40°C Cob 50 20 10 0.1 0.2 2m 1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be fr.


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