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www.fairchildsemi.com
FSDM0565R
Green Mode Fairchild Power Switch (FPSTM)
Features
• Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operation consumes under 1 W at
240VAC & 0.5W load • Precision Fixed Operating Frequency (66kHz) • Internal Start-up Circuit • Pulse by Pulse Current Limiting • Abnormal Over Current Protection (AOCP) • Over Voltage Protection (OVP) • Over Load Protection (OLP) • Internal Thermal Shutdown Function (TSD) • Auto-Restart Mode • Under Voltage Lock Out (UVLO) with hysteresis • Low Operating Current (2.5mA) • Built-in Soft Start
OUTPUT POWER TABLE
230VAC ±15%(3)
85-265VAC
PRODUCT
Adapt- Open Adapt- Open er(1) Frame(2) er(1) Frame(2)
FSDM0565R 60W
70W
50W
60W
FSDM07652R 70W
80W
60W
70W
Table 1. Notes: 1. Typical continuous power in a non-ven-
tilated enclosed adapter measured at 50°C ambient. 2. Maximum practical continuous power in an open frame design at 50°C ambient. 3. 230 VAC or 100/115 VAC with doubler.
Application
• SMPS for LCD monitor and STB • Adaptor
Typical Circuit
Description
AC
The FSDM0565R is an integrated Pulse Width Modulator
IN
DC
(PWM) and Sense FET specifically designed for high
OUT
performance offline Switch Mode Power Supplies (SMPS)
with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode
Vstr Drain PWM
PWM control block. The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge
Vfb
Vcc
Source
blanking (LEB), optimized gate driver, internal soft start,
temperature compensated precise current sources for a loop
compensation and self protection circuitry. Compared with
discrete MOSFET and PWM controller solution, it can reduce
Figure 1. Typical Flyback Application
total cost, component count, size and weight simultaneously
increasing efficiency, productivity, and system reliability. This
device is a basic platform well suited for cost effective
designs of flyback converters.
©2005 Fairchild Semiconductor Corporation
Rev.1.0.5
FSDM0565R
Internal Block Diagram
N.C 5 0.5/0.7V
Vfb 4
Vcc Idelay
+
Vref
IFB
Soft start
Vcc 3
8V/12V Switching disable
2.5R R
Vcc good
Vstr 6
Istart
Vref
OSC
PWM
SQ RQ
LEB
VSD Vcc
Vovp TSD
Vcc good
SQ RQ
AOCP
Drain 1
Internal Bias
Gate driver
Vocp
2 GND
Figure 2. Functional Block Diagram of FSDM0565R
2
Pin Definitions
FSDM0565R
Pin Number 1 2 3
4 5 6
Pin Name Drain GND Vcc
Vfb N.C Vstr
Pin Function Description
This pin is the high voltage power Sense FET drain. It is designed to drive the transformer directly.
This pin is the control ground and the Sense FET source.
This pin is the positive supply voltage input. During start up, the power is supplied by an internal high voltage current source that is connected to the Vstr pin. When Vcc reaches 12V, the internal high voltage current source is disabled and the power is supplied from the auxiliary transformer winding.
This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 6.0V, the over load protection is activated resulting in shutdown of the FPSTM.
-
This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external capacitor that is connected to the Vcc pin. Once Vcc reaches 12V, the internal current source is disabled.
Pin Configuration
TO-220F-6L
6.Vstr 5.N.C. 4.Vfb 3.Vcc 2.GND 1.Drain
Figure 3. Pin Configuration (Top View)
3
FSDM0565R
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter Drain-source voltage Vstr Max Voltage Pulsed Drain current (Tc=25°C)(1) Continuous Drain Current(Tc=25°C) Continuous Drain Current(Tc=100°C) Single pulsed avalanche energy (2) Single pulsed avalanche current (3) Supply voltage Input voltage range Total power dissipation(Tc=25°C) Operating junction temperature Operating ambient temperature Storage temperature range ESD Capability, HBM Model (All pins excepts for Vstr and Vfb) ESD Capability, Machine Model (All pins excepts for Vstr and Vfb)
Symbol VDSS VSTR IDM
ID
EAS IAS VCC VFB PD(Watt H/S) Tj TA TSTG
-
-
Value 650 650 11 2.8 1.7 190
20 -0.3 to VCC 45 Internally limited -25 to +85 -55 to +150 2.0 (GND-Vstr/Vfb=1.5kV) 300 (GND-Vstr/Vfb=225V)
Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=14mH, starting Tj=25°C 3. L=13uH, starting Tj=25°C
Thermal Impedance
Parameter Junction-to-Ambient Thermal Junction-to-Case Thermal
Symbol
θJA(1) θJC(2)
Notes: 1. Free standing with no heat-sink under natural convection. 2. Infinite cooling condition - Refer to the SEMI G30-88.
Value 49.90 2.78
Unit V V
ADC A A mJ A V V W °C °C °C kV
V
Un.