2SD716. D716 Datasheet

D716 2SD716. Datasheet pdf. Equivalent

Part D716
Description 2SD716
Feature 2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high po.
Manufacture Wing Shing Computer Components
Datasheet
Download D716 Datasheet



D716
2SD716
SILICON EPITAXIAL PLANAR TRANSISTOR
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICKwww.DataSheet4U.com REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-3P(I)D
Tmb 25
IC = 3.0A; IB = 0.3A
IF = 3.0A
MIN MAX UNIT
- 100 V
- 100 V
- 6A
-A
- 60 W
- 2V
1.5 2.0
V
-s
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
- 100 V
- 100 V
5V
- 6A
- 1.5 A
- 60 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=100V
VEB=5V
IC=1mA
IC = 3.0A; IB = 0.3A
IC = 1A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V
MIN MAX UNIT
- 0.2 mA
- 0.2 mA
100 V
- 2V
50 250
12 - MHz
150 pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com





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