2SD716
GENERAL DESCRIPTION
SILICON EPITAXIAL PLANAR TRANSISTOR
Silicon NPN high frequency, high power transistors in a...
2SD716
GENERAL DESCRIPTION
SILICON EPITAXIAL PLANAR
TRANSISTOR
Silicon
NPN high frequency, high power
transistors in a plastic envelope, primarily for use in audio and general purpose
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QUICK REFERENCE DATA
SYMBOL
TO-3P(I)D
CONDITIONS VBE = 0V MIN
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 3.0A; IB = 0.3A IF = 3.0A
1.5
MAX 100 100 6 60 2 2.0 -
UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55 -
Tmb 25
MAX 100 100 5 6 1.5 60 150 150
UNIT V V V A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf
PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time
CONDITIONS VCB=100V VEB=5V IC=1mA IC = 3.0A; IB = 0.3A IC = 1A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V
MIN 100 50 12
MAX 0.2 0.2 2 250 150...
