2SC5075. C5075 Datasheet

C5075 2SC5075. Datasheet pdf. Equivalent

Part C5075
Description 2SC5075
Feature www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Manufacture Toshiba
Datasheet
Download C5075 Datasheet



C5075
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5075
2SC5075
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Industrial Applications
Unit: mm
High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max)
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 500 V
Collector-emitter voltage
VCEO 400 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power dissipation
Junction temperature
PC 1.3 W
Tj
150 °C
JEDEC
Storage temperature range
Tstg
55 to 150
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8M1A
temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10



C5075
Electrical Characteristics (Ta = 25°C)
2SC5075
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 400 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 1 A
IC = 1 A, IB = 0.2 A
IC = 1 A, IB = 0.2 A
ton
20 μs
Input IB1
Output
tstg IB2
VCC 200 V
tf
IB1 = IB2 = 0.08 A, duty cycle < 1%
Min Typ. Max Unit
― ― 100 μA
――
1 mA
500
V
400
V
20 ― ―
8 ――
― ― 1.0 V
― ― 1.5 V
― ― 1.0
― ― 2.5 μs
― ― 1.0
Marking
C5075
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-10





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