8050S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 0.625 W£¨ Tamb=25¡æ£© www.DataSheet4U.com Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) 1.EMITTER 2. COLLECTOR 3.BASE 1 2 3 unless Test otherwise MIN 40 25 5 specified£© TYP MAX UNIT V V V 0.1 0.1 0.1 ¦Ì A ¦Ì A ¦Ì A conditions Ic= 100¦Ì A , IE=0 Ic= 1 mA£¬ IB=0 IE= 100¦Ì A£¬ IC=0 VCB= 40 V , VCE= 20 V , IE=0 IB=0 VEB= 3 V £¬ IC=0 VCE= 1 V, IC= 50m A VCE= 1 V, IC= 500m A IC=500mA, IB=50 mA IC=500mA, IB=50 mA VCE= 6 V, IC=20mA 85 50 300 0.6 1.2 V V Transition frequency fT f =30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 ...