(IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
VDSS
ID25
RDS(on) 0.39 Ω 0.43 Ω
IXFN 24N100 1000 V ...
Description
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
VDSS
ID25
RDS(on) 0.39 Ω 0.43 Ω
IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns
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Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1
Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -55 ... +150 150 -55 ... +150 V V V V A A A A A mJ J V/ns W °C °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
S D
G = Gate S = Source
D = Drain
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1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
300 2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage...
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