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Planar Transistor. C1050 Datasheet |
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2SC1050
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors in
a plastic envelope, primarily for use in audio and
general purpose
QUICKwww.DataSheet4U.com REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
IC = 0.5A; IB = 0.1A
IF = 0.5A
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=300V
VEB=5V
IC=1mA
IC = 0.5A; IB =0.1A
IC = 0.3A; VCE = 5V
IC = 0.1A; VCE = 12V
VCB = 10V
TO-3
TYP MAX UNIT
- 300 V
- 250 V
- 1A
-A
- 40 W
- 1.2 V
1.5 2.0
V
-s
MIN MAX UNIT
- 300 V
- 250 V
5V
- 1A
- 0.2 A
- 40 W
-55 150
- 150
TYP MAX UNIT
- 0.2 mA
- 0.2 mA
250
- 1.2 V
30 200
5 - MHz
50 - pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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