Laser Diode
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
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Model : QL85H6S-A/B/C
Signature of Approva...
Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
www.DataSheet4U.com
Model : QL85H6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL85H6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver.3 APR.2005
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♦OVERVIEW
QL85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for industrial optical module and sensor applications.
♦APPLICATION
- Sensor - Industrial Optical Module
♦FEATURES
- Visible Light Output - Optical Power Output - Package Type : : : λp = 850 nm 20mW CW TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
A B C
Pin Configuration
LD cathode, PD anode (Fig. 1) LD , PD anode (Fig. 2) LD anode, PD cathode (Fig. 3)
Fig. 1 QL85H6SA
Fig. 2 QL85H6SB
Fig. 3 QL85H6SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse
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Symbols P V V Topr Tstg
Values 22 2 30 −10 ~ +60 −40 ~ +85
Unit mW V V °C °C
Voltage
Operating Temperature Storage Temperature
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items
Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence
Symbols
Po Ith Iop SE Vop
M...
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