IRFP3206PBF

PD - 97127 IRFP3206PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G www.DataSheet4U.com D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.4m: 3.0m: 200A c 120A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S G D S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 200c 140c 120 840 280 1.9 ± 20 5.0 -55 to + 175 300 10lbxin (1.1Nxm) 170 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface ...