B1261-Z

DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −60 V Emitter to Base Voltage VEBO −7.0 V Collector Current (DC) IC(DC) −3.0 A Collector Current (pulse) Note 1 IC(pulse) −5.0 A Base Current (DC) IB(DC) −0.5 A Total Power Dissipation (TA = 25°C) Note 2 PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 10 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 123 2.3 ±0.3 0.5 ±0.1 2.3 ±0.3 0.5 ±0.1 0.15 ±0.15 TO-252 (MP-3Z) 1. Base 2. Collector 3. Emitter 4. Collector Fin Note The depth of notch at the top of the fin is from 0 to 0.2 mm. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and add...