Transys
Electronics
L I M I T E D
TO-252 Plastic-Encapsulate Transistors
2SB1261-Z
FEATURES Power dissipation
www.DataS...
Transys
Electronics
L I M I T E D
TO-252 Plastic-Encapsulate
Transistors
2SB1261-Z
FEATURES Power dissipation
www.DataSheet4U.com
TRANSISTOR (
PNP) TO-252
1. BASE
PCM:
2
W (Tamb=25℃)
2. COLLECTOR
Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
3. EMITTER
1
2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VEB=-7V, IC=0 VCE=-2V, IC=-200mA VCE=-2V, IC=-600mA VCE=-2V, IC=-2A IC=-1.5A, IB=-150mA IC=-1.5A, IB=-150mA VCE=-5V, IC=-1.5A VCB=-1.0V, IE=0, f=1MHz
-60 -60 -7 -10 -10 60 100 50 -0.3 -1.2 120 30
0.5 400
µA µA
V V MHz pF
fT
Cob ton tstg tf
VCC=-10V, IC=-1A, IB1=-IB2=-0.1A
2.0 0.5
µs
CLASSIFICATION OF hFE(1) Rank Range M 100-200 L 160-320 K 200-400
...