SEMIX151GD128DS

SEMiX151GD128Ds SEMiX®13 SPT IGBT Modules SEMiX151GD128Ds Preliminary Data Features Homogeneous Si SPT = Soft-Punch-Through technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications AC inverter drives UPS Electronic welders up to 20 kHz Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) IC = 75 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 3 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 75 A Tj = 125 °C RG on = 5.5 Ω RG off = 5.5 Ω per IGBT per IGBT GD © by SEMIKRON Rev. 9 – 02.12.2008 Values 1200 154 110 75 150 -20 ... 20 10 -40 ... 150 119 82 75 150 720 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.9 2.3 V 2.10 2.55 V 1 1.15 V 0.9 1.05 V 12.0 15.3 mΩ 16.0 20.0 mΩ 4.5 ...