DatasheetsPDF.com

SEMIX151GD126HDS Dataheets PDF



Part Number SEMIX151GD126HDS
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SEMIX151GD126HDS DatasheetSEMIX151GD126HDS Datasheet (PDF)

SEMiX151GD126HDs SEMiX® 13 Trench IGBT Modules SEMiX151GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM .

  SEMIX151GD126HDS   SEMIX151GD126HDS



Document
SEMiX151GD126HDs SEMiX® 13 Trench IGBT Modules SEMiX151GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel Tj = 25 °C Tj = 125 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 4 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 100 A VGE = ±15 V RG on = 1.7  RG off = 1.7  Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Eoff Tj = 125 °C Rth(j-c) per IGBT Values 1200 168 119 100 200 -20 ... 20 10 -40 ... 150 152 105 100 200 700 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.7 2.10 V 2.0 2.45 V 1 1.2 V 0.9 1.1 V 7.0 9.0 m 11.0 13.5 m 5 5.8 6.5 V 1 mA mA 7.2 nF 0.38 nF 0.33 nF 800 nC 7.50  290 ns 50 ns 12 mJ 605 ns 110 ns 14 mJ 0.21 K/W GD © by SEMIKRON Rev. 1 – 03.07.2013 1 SEMiX151GD126HDs SEMiX® 13 Trench IGBT Modules SEMiX151GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol Conditions Inverse diode VF = VEC IF = 100 A VGE = 0 V chiplevel Tj = 25 °C Tj = 125 °C VF0 chiplevel Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 125 °C IF = 100 A Tj = 125 °C di/dtoff = 2900 A/µs VGE = -15 V Tj = 125 °C VCC = 600 V Tj = 125 °C per diode Module LCE RCC'+EE' res., terminal-chip TC = 25 °C TC = 125 °C Rth(c-s) per module Ms to heat sink (M5) Mt to terminals (M6) min. 0.9 0.7 5.0 7.0 3 2.5 typ. 1.6 1.6 1 0.8 6.0 8.0 125 26 11.5 20 0.7 1 0.04 max. 1.80 1.8 1.1 0.9 7.0 9.0 0.36 5 5 w Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 350 493 ± 5% 3550 ±2% Unit V V V V m m A µC mJ K/W nH m m K/W Nm Nm Nm g  K GD 2 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX151GD126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 03.07.2013 3 SEMiX151GD126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX151GD126HDs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 03.07.2013 5 .


SEMIX151GD128DS SEMIX151GD126HDS SEMIX101GD12T4S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)