EFA018A-70

Excelics DATA SHEET www.DataSheet4U.com EFA018A-70 Low Distortion GaAs Power FET 44 19 4 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +18.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 20 D 180 Min. (All Leads) S S 40 G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF Ga Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12GHz Noise Figure f=12GHz Vds=2V, Ids=15mA Associated Gain f=12GHz Vds=2V, Ids=15mA Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 mA -10 -6 MIN 16.5 9.0 All Dimensions In mils. TYP 18.5 18.5 10.5 8.0 33 1.1 10.5 MAX UNIT dBm dB % dB dB 25 20 50 30 -2.0 -15 -14 480* 80 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=0.5mA Source Breakdown Voltage Igs=0.5mA Thermal Resistance C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10V 6V Vds Gate-Source Voltage -6V -4V Vgs Drain Current Idss 40mA Ids Forward Gate Current 4mA 0.7mA Igsf Input Power 17dBm @ 3dB Com...