EFA080A-100F

Excelics DATA SHEET HERMETIC 100mil CERAMIC FLANGE PACKAGE +26.0dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA080A-100F Low Distortion GaAs Power FET  5DG  'LD     * '  www.DataSheet4U.com     7<3  7<3 All Dimensions In mils  ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=2.0mA -12 -7 MIN 24.0 6.0 TYP 26.0 7.5 32 MAX UNIT dBm dB % 130 90 210 120 -2.0 -15 -14 58* 300 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 250mA Ids Forward Gate Current 20mA 4mA Igsf Input Power 25dBm @ 3dB Compression Pin Channel Temperature 175oC 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 2.5 W 2.0W Pt Note: 1. Exceeding any of the above r...