SI1904EDH

Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 1.04 @ VGS = 2.5 V 0.65 rDS(on) (W) 0.810 @ VGS = 4.5 V ID (A) 0.73 D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch D1 D2 www.DataSheet4U.com SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CB XX YY G1 Lot Traceability and Date Code Part # Code 2 kW 2 kW G2 G1 2 5 G2 D2 3 4 S2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID 0.53 IDM IS 0.61 0.74 0.38 –55 to 150 2 0.48 0.57 0.30 W _C 0.46 A Symbol VDS VGS 5 secs 25 Steady State Unit V "8 0.73 0.64 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71445 S-03929—Rev. B, 21-May-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W 1 Si1904EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS =...