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TG2210FT

Toshiba Semiconductor

RF SPDT Switch

TG2210FT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2210FT RF SPDT Switch Switch the receive filter for m...


Toshiba Semiconductor

TG2210FT

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Description
TG2210FT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2210FT RF SPDT Switch Switch the receive filter for mobile communication. Switch the diversity antenna. Switch the local signal. www.DataSheet4U.com Features · · · · Low insertion Loss: LOSS = 0.4dB (typ.) High isolation: ISL = 30dB (typ.) Low voltage operation: VC = 0 V/2.5 V Small package: TU6 package (2.0 × 1.25 × 0.6 mm) Weight: 0.008 g (typ.) Pin Connection, Marking (top view) VC1 6 RFcom 5 VC2 4 UL 1 RF2 2 GND 3 RF1 Maximum Ratings (Ta = 25°C) Characteristics Control voltage Input power Operating temperature range Storage temperature range Symbol VC1 VC2 Pi Topr Tstg Rating 5 5 1 -40~85 -55~125 Unit V V W °C °C Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. 1 2002-07-30 TG2210FT Electrical Characteristics (f = 1 GHz, Ta = 25°C, Zg = Zl = 50 W) Characteristics Symbol LOSS (1) Insertion LOSS LOSS (2) ISL (1) Isolation ISL (2) Input power at 1dB gain compression www.DataSheet4U.com Test Circuit 1 1 1 1 1 ¾ ¾ ¾ Test Condition VC1 = 2.5 V, VC2 = 0 V, Pi = 0dBmW VC1 = 0 V, VC2 = 2.5 V, Pi = 0dBmW VC1 = 2.5 V, VC2 = 0 V, Pi = 0dBmW VC1 = 0 V, VC2 = 2.5 V, Pi = 0dBmW VC1 = 2.5 V, VC2 = 0 V or VC1 = 0 V, VC2 = 2.5 V VC1 = 0 V, VC2 = 3 V or VC1 = 3 V, VC2 = 0 V VC1 = 0 V, VC2 = 2.5 V or VC1 = 2.5 V, VC2 = 0 V Min ¾ ¾ 27 27 18 ¾ ¾ ¾ Typ. 0.4 0.4 30 30 ¾ ¾ ¾ 200 Max 0.7 0.7 ¾ ¾ ¾ 0.01 0.01 ¾ Unit dB dB dB dB ...




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