25V N-Channel MOSFET
TSM25N03
25V N-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
25 14 @ VGS = 10V 19 @ VGS = 4.5V
TO-252
Pin Definit...
Description
TSM25N03
25V N-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
25 14 @ VGS = 10V 19 @ VGS = 4.5V
TO-252
Pin Definition: 1. Gate 2. Drain 3. Source
ID (A)
25 25
www.DataSheet4U.com Features
Block Diagram
● ●
Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Application
● ● Load Switch Dc-DC Converters and Motors Drivers
Ordering Information
Part No.
TSM25N03CP RO
Package
TO-252
Packing
2.5Kpcs / 13” Reel N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)
a,b
Symbol
VDS VGS ID IDM IS EAS
o o
Limit
25 ±20 25 100 20 45 60 23 +150 -55 to +150
Unit
V V A A A mJ W
o o
Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 70 C
PD TJ TJ, TSTG
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
Symbol
TL RӨJC RӨJA
Limit 10
1.8 40
Unit S
o o
C/W C/W
1/6
Version: A07
TSM25N03
25V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static D...
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