Document
TSM2311
20V P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ
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Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No. TSM2311CX Packing Tape & Reel Package SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
o
Symbol
VDS VGS ID IDM PD
Limit
- 20V ±8 -4 - 20 1.25 0.8 +150 - 55 to +150
Unit
V V A A W
o o
C C
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL Rθja
Limit
5 100
Unit
S
o
C/W
TSM2311
1-1
2003/12 rev. B
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State
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Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -4.0A VGS = - 2.5V, ID = -2.5A VDS = VGS, ID = - 250uA VDS = - 16V, VGS = 0V VGS = ± 8V, VDS = 0V VDS ≧- 10V, VGS = -4.5V VDS = - 5V, ID = - 4.0A
BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs
- 20 --
-45
-55
V
Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance - 0.45 ---6 -----9 -- 1.0 ± 100 ---75 85
mΩ
V uA nA A S
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = - 1.6A, VGS = 0V IS VSD ---- 0.8 - 1.6 - 1.2 A V VDS = - 6V, VGS = 0V, f = 1.0MHz VDD = - 4V, RL = 4Ω, ID = - 1A, VGEN = - 4.5V, RG = 6Ω VDS = - 6V, ID = - 4.0A, VGS = - 4.5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------8.5 1.5 2.1 18 45 95 65 970 485 160 12 ---------pF nS nC
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM2311
2-2
2003/12 rev. B
SOT-23 Mechanical Drawing
A B
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F
DIM A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 2.91 0.113 0.115 0.39 0.42 0.015 0.017 1.78 2.03 0.070 0.080 0.51 0.61 0.020 0.024 1.59 1.66 0.063 0.065 1.04 0.07 1.08 0.09 0.041 0.003 0.043 0.004
E
G
F G
D
C
TSM2311
3-3
2003/12 rev. B
.