TSM2301

TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit - 20V ±8 - 2.3 - 10 1.25 0.8 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rθja Limit 5 100 Unit S o C/W TSM2301 1-1 2003/12 rev. C Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance www.DataSheet4U.com Conditions Symbol Min Typ Max Unit VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -2.8A VGS = - 2.5V, ID = -2.0A VDS = VGS, ID = - 250uA VDS = - 16V, VGS = 0V VGS = ± 8V, VDS = 0V VDS ≧- 10V, VGS = -5V VDS =...