N-Channel MOSFET
PROVISIONAL
Wisdom Semiconductor
WFW10N80
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Ty...
Description
PROVISIONAL
Wisdom Semiconductor
WFW10N80
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
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■ ■ ■
1. Gate {
▲
● ●
{
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
TO-247
G DS
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
800 10 6.3 40
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
960 26 4.0 260 2.08 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.24 -...
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