CRF24010D

PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater power density and wider bandwidths compared www.DataSheet4U.com to Si and GaAs transistors. PN: CRF240 10D FEATURES APPLICATIONS 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 5 GHz Operation High Efficiency Wideband Military Communications Secure Comms for Homeland Defense Class A, AB Amplifiers TDMA, EDGE, CDMA and W-CDMA Broadband Amplifiers MMDS Packaging Information Bare die are shipped in Gel-Pak® containers. Non-adhesive tacky membrane immobilizes die during shipment. ly 2006 Rev 1.5 – Ju Subject to change without notice. www.cree.com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case Mounting Temperature (30 seconds) 1 1 Symbol VDSS VGS TSTG TJ RθJC TS Rating 120 -20, +3 -55, 150 255 5.6 320 Units VDC VDC ˚C ˚C ˚C/W ˚C Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier. www.DataSheet4U.com Electrical Characteristics (TC =...