Document
PRELIMINARY
CRF24060
60 W, SiC RF Power MESFET
Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater efficiency, greater power www.DataSheet4U.com density, and wider bandwidths compared to Si and GaAs transistors.
Package Type : 440193 PN: CRF240 60F
FEATURES • • • • • • • 13 dB Small Signal Gain High Efficiency 50 W minimum P1dB Up to 2400 MHz Operation 48 V Operation High Breakdown Voltage High Temperature Operation
APPLICATIONS • • • • • • Wideband Military Communications Secure Comms for Homeland Defense Class A, A/B Amplifiers TDMA, EDGE, CDMA, W-CDMA Broadband Amplifiers MMDS
Typical Performance
• • • • • Drain Efficiency of 45% at 1500 MHz at 60 W POUT IMD -31 dBc at 1000 MHz at 50 W PEP 13 dB Small Signal Gain at 1500 MHz 60 W @ P1dB at 1500 MHz 80 W P3dB at 1500 MHz
il 2007 Rev 1.2 – Apr
Note: Measured in amplifier circuit CRF24060-TB at VDS = 48 V, IDQ = 2000 mA.
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Drain-source Voltage Gate to source Voltage Storage Temperature Operating Junction Temperature Thermal Resistance, Junction to Case Soldering Temperature
Symbol VDSS VGS TSTG TJ RθJC TS
Rating 120 -20, +3 -55, +150 255 1.4 225
Units Volts Volts ˚C ˚C ˚C/W ˚C
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Electrical Characteristics (TC = 25˚C)
Characteristics DC Characteristics Gate Threshold Voltage Gate Quiescent Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature Screw Torque RF Characteristics Gain Power Output at 1 dB Compression Power Output at 3 dB Compression Drain Efficiency1,2 Intermodulation Distortion GSS P1dB P3dB
η
Symbol
Min.
Typ.
Max.
Units
Conditions
VGS(th) VGS(Q) IDSS V(BR)DSS gm TC T
-13 – 6.0 100 700 -30 –
-10 -7 7.5 – 800 – –
– – 9.0 – – 125 80
VDC VDC A VDC mS ˚C in-oz
VDS = 10 V, ID = 2.5 mA VDS = 48 V, ID = 2000 mA VDS = 10 V, VGS = 0 V VGS = -18, ID = 50 mA VDS = 48 V, ID = 2000 mA
Reference 440193 Rev 1
10 50 40 –
13 60 80 45 -31
– – – – –
dB W W % dBc
VDD = 48 V, IDQ = 2000 mA, f = 1500 MHz VDD = 48 V, IDQ = 2000 mA, f = 1500 MHz VDD = 48 V, IDQ = 2000 mA, f = 1500 MHz VDD = 48 V, IDQ = 2000 mA, f = 1500 MHz POUT = P1dB VDD = 48 V, IDQ = 2000 mA, f1 = 1000 MHz, f2 = 1000.1 MHz, POUT = 50W PEP No damage at all phase angles, VDD = 48 V, IDQ = 2000 mA, f = 1000 MHz, POUT = 50W CW
IMD3
Output Mismatch Stress
VSWR
10 : 1
–
–
Y
Notes: 1 Drain Efficiency = POUT / PDC 2 Power Added Efficiency (PAE) = (POUT - PIN) / PDC
Copyright © 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc.
CRF24060 Rev 1.2
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical Performance (TC = 25˚C, VDS = 48 V, IDQ = 2000 mA in Flange Package) Typical Power Performance Swept CW Data vs Power at 1000 MHz
51 49 47 45 60.00 56.00 52.00 48.00 44.00 40.00 36.00 32.00 28.00 24.00 20.00 16.00 12.00 8.00 4.00 0.00 18 20 22 24 26 28 30 32 34 36 38 40 K (Drain Efficiency) (%)
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Pout (dBm)
43 41 39 37 35 33 31
Pin (dBm)
Typical Wideband Performance Swept CW Data vs Frequency
15 14 13 12 55 54 53 52 Psat dB (dBm) 51 50 49 48 47 46 45 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
Gain (dB)
11 10 9 8 7 6 5
Frequency (GHz)
Copyright © 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc.
CRF24060 Rev 1.2
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical Performance (VDS = 48 V, IDQ = 2000 mA in the Flange Package)
Typical CW Gain and P1dB vs Frequency
20 19 18 17 50 49 48 47 46 45 44 43 42 41 40 1.3
Gain (dB)
15 14 13 12 11 10 0.8
0.85
0.9
0.95
1
1.05 Frequency (GHz)
1.1
1.15
1.2
1.25
CW Power Sweep at 1.0 GHz
50 60
45
50
35
30
30
20
25
10
20 15 20 25 Pin (dBm) 30 35 40
0
Copyright © 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Wireless by Cree is a trademark of Cree, Inc.
CRF24060 Rev 1.2
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Drain Efficiency (%)
40 Pout (dBm)
40
P1 (dBm)
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16
Typical Package S-Parameters (Small Signal, VDS = 48 V, IDQ = 2000 mA, magnitu.