MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N20E/D
Designer's
TMOS E-FET .™ Power Field Effect...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N20E/D
Designer's
TMOS E-FET .™ Power Field Effect
Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www.DataSheet4U.com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole
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Data Sheet
MTW32N20E
Motorola Preferred Device
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
®
D
G S
CASE 340K–01, Style 1 TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source A...