NPN Transistor. 2N5581 Datasheet

2N5581 Transistor. Datasheet pdf. Equivalent

Part 2N5581
Description Silicon NPN Transistor
Feature 2N5581 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and.
Manufacture Semicoa Semiconductor
Datasheet
Download 2N5581 Datasheet



2N5581
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5581J)
www.DataSheetJ4AU.NcoTmX level (2N5581JX)
JANTXV level (2N5581JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
2N5581
Silicon NPN Transistor
Data Sheet
Applications
General purpose switching
Low power
NPN silicon transistor
Features
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/423
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
IC
PT
PT
TJ
TSTG
TC = 25°C unless otherwise specified
Rating
Unit
50 Volts
75 Volts
800 mA
500
2.86
2
11.43
-55 to+200
mW
mW/°C
W
mW/°C
°C
-55 to+200
°C
Copyright2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2



2N5581
2N5581
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA
50
Volts
www.DataSCheoeltl4eUct.coor-mBase Cutoff Current
Emitter-Base Cutoff Current
ICBO1
ICBO2
ICBO3
IEBO1
IEBO2
VCB = 75 Volts
VCB = 60 Volts
VCB = 60 Volts, TA = 150°C
VEB = 6 Volts
VEB = 4 Volts
10 µA
10 nA
10 µA
10 µA
10 nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Test Conditions
Min Typ Max Units
IC = 0.1 mA, VCE = 10 Volts
IC = 1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55°C
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
30
35
40
40
20
15
120
1.2 Volts
2.0
0.3 Volts
1.0
Symbol
Test Conditions
Min Typ Max Units
|hFE|
hFE
COBO
CIBO
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
2.5
30
8 pF
25 pF
Switching Characteristics
Parameter
Saturated Turn-On Time
Saturated Turn-Off Time
Symbol
tON
tOFF
Test Conditions
Min Typ Max Units
35 ns
300 ns
Copyright2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2





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