IHW20R120R2. H20R120R2 Datasheet

H20R120R2 IHW20R120R2. Datasheet pdf. Equivalent

H20R120R2 Datasheet
Recommendation H20R120R2 Datasheet
Part H20R120R2
Description IHW20R120R2
Feature H20R120R2; IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Po.
Manufacture Infineon
Datasheet
Download H20R120R2 Datasheet





Infineon H20R120R2
IHW20N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
www.DataSheet4U.coLmow EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW20N120R2
1200V 20A
1.55V
175°C H20R1202 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1200
40
20
60
60
40
20
30
50
130
120
±20
±25
330
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.2 July 06



Infineon H20R120R2
IHW20N120R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
www.DataSheetT4Uh.ecrommal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.45
0.45
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=20A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=20A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.5mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.55
1.75
1.85
1.45
1.6
1.65
5.8
-
-
-
14.5
none
Unit
max.
-V
1.75
-
-
1.7
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 1.2 July 06



Infineon H20R120R2
IHW20N120R2
Soft Switching Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
www.DataSheet4U.com
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=20A
VGE=15V
-
-
-
-
-
1887
59
47
143
13
- pF
-
-
- nC
- nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=20A
VGE=0 /15V,
RG=15,
CL σσ22))==13890pnFH ,
min.
-
-
-
-
-
Value
typ.
Unit
Max.
359 - ns
53 -
--
1.2 -
1.2 - mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=175°C
VCC=600V,IC=20A,
VGE= 0 /15V,
RG= 15,
CL σσ==13890pnFH2 )2 ) ,
min.
-
-
-
-
-
Value
Typ.
427
99
-
2.0
2.0
Unit
Max.
- ns
-
-
-
- mJ
2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 1.2 July 06





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