K1342

2SK1342 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% www.DataSheet4U.com 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 8 20 8 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1342 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 — — 2.0 — 3.5 — — — — — — — — — Typ — — — — — 1.2 5.5 1730 700 310 25 135 185 130 0.9 900 Max — — ±10 250 3.0 1.6 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 I D = 4 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static d...