70N08 Datasheet (data sheet) PDF

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FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description F eatures • • • • • • • 77. 5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low C rss ( typical 180 pF) Fast switching 10 0% avalanche tested Improved dv/dt capa bility 175°C maximum junction temperat ure rating TM These N-Channel enhance ment mode power field effect transistors are

produced using Fairchild’s proprietary , www.DataSheet4U.com planar stripe, DM OS technology. This advanced technology has been especially tailored to minimi ze on-state resistance, provide superio r switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel l suited for low voltage applications s uch as automotive, high effici