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NTP70N08 Dataheets PDF



Part Number NTP70N08
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 80V Power MOSFET
Datasheet NTP70N08 DatasheetNTP70N08 Datasheet (PDF)

NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive system applications. Typical applications include integrated starter alternator, electronic power steering, electronic fuel injection, www.DataSheet4U.com catalytic converter h.

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NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive system applications. Typical applications include integrated starter alternator, electronic power steering, electronic fuel injection, www.DataSheet4U.com catalytic converter heaters and other high power applications made possible via an automotive 42 V bus. ON Semiconductor’s latest technology offering continues to offer high avalanche energy capability and low reverse recovery losses. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 80 Vdc, VGS = 0 Vdc) (VDS = 80 Vdc, VGS = 0 Vdc, TJ =150°C) Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) NTP/B70N08 NTP/B70N08L Static Drain–to–Source On–Resistance (ID = 35 Adc) NTP/B70N08, VGS= 10 V NTP/B70N08L, VGS = 5 V VGS(th) 2.0 1.0 RDS(on) 3.0 1.5 4.0 2.0 mΩ D2PAK (XTB) CASE 418B STYLE 2 Vdc V(BR)DSS 80 IDSS – – IGSS – – – – 1.0 10 nAdc ±100 TO–220 (XTP) CASE 221A–09 STYLE 5 – – µAdc Vdc Symbol Min Typ Max Unit http://onsemi.com 70 AMPERES 70N08 Typ RDS(on) = 19 mΩ 70N08L Typ RDS(on) = 21 mΩ – – 19 21 – – This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2000 1 October, 2000 – Rev. 0 Publication Order Number: NTP70N08/D NTP70N08, NTB70N08, NTP70N08L, NTB70N08L PACKAGE DIMENSIONS TO–220 CASE 221A–09 ISSUE AA –T– B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 www.DataSheet4U.com H Q 1 2 3 A U K Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN http://onsemi.com 2 NTP70N08, NTB70N08, NTP70N08L, NTB70N08L D2PAK CASE 418B–03 ISSUE D C E –B– 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S www.DataSheet4U.com –T– SEATING PLANE K G D 3 PL 0.13 (0.005) H M J T B M STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 3 NTP70N08, NTB70N08, NTP70N08L, NTB70N08L www.DataSheet4U.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal inj.


70N08 NTP70N08 NTP70N08L


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