DATA SHEET
SILICON POWER TRANSISTOR
2SC4331,4331-Z
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
www.Data...
DATA SHEET
SILICON POWER
TRANSISTOR
2SC4331,4331-Z
NPN SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
www.DataSheet4U.com
The 2SC4331 and 2SC4331-Z are mold power
transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This
transistor is ideal for use in switching
regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
PACKAGE DRAWING (Unit: mm)
1.5 −0.1
+0.2
6.5 ±0.2 5.0 ±0.2
1.6 ±0.2
2.3 ±0.2 0.5 ±0.1
4
5.5 ±0.2 7.0 MIN. 13.7 MIN.
+0.2
FEATURES
Available for high-current control in small dimension Z type is a lead-processed product and is deal for mounting a hybrid IC. Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Fast switching speed: tf ≤ 0.4 μs MAX. (IC = 3.0 A) High DC current gain and excellent linearity
1
2
3
1.1 ±0.2
0.5 −0.1
2.3 2.3
0.75
0.5 −0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature
Note 1
150 100 7.0 5.0 10 2.5 15 V
TO-251 (MP-3)
VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg 1.0
5.0 ±0.2 4.4 ±0.2 4
5.5 ±0.2
+0.2 −0.1
V V A A A W
Note 3
6.5 ±0.2 2.3 ±0.2 0.5 ±0.1 Note
1.0 ±0.5 0.4 MIN. 0.5...