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2SC4331-Z

NEC

Silicon Power Transistor

DATA SHEET SILICON POWER TRANSISTOR 2SC4331,4331-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING www.Data...


NEC

2SC4331-Z

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DATA SHEET SILICON POWER TRANSISTOR 2SC4331,4331-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING www.DataSheet4U.com The 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (Unit: mm) 1.5 −0.1 +0.2 6.5 ±0.2 5.0 ±0.2 1.6 ±0.2 2.3 ±0.2 0.5 ±0.1 4 5.5 ±0.2 7.0 MIN. 13.7 MIN. +0.2 FEATURES Available for high-current control in small dimension Z type is a lead-processed product and is deal for mounting a hybrid IC. Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Fast switching speed: tf ≤ 0.4 μs MAX. (IC = 3.0 A) High DC current gain and excellent linearity 1 2 3 1.1 ±0.2 0.5 −0.1 2.3 2.3 0.75 0.5 −0.1 +0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Note 1 150 100 7.0 5.0 10 2.5 15 V TO-251 (MP-3) VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg 1.0 5.0 ±0.2 4.4 ±0.2 4 5.5 ±0.2 +0.2 −0.1 V V A A A W Note 3 6.5 ±0.2 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5...




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