DATA SHEET
SILICON POWER TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The...
DATA SHEET
SILICON POWER
TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4332 and 2SC4332-Z are mold power
transistors developed for high-speed switching and features a very low www.DataSheet4U.com collector-to-emitter saturation voltage. This
transistor is ideal for use in switching
regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
PACKAGE DRAWING (Unit: mm)
FEATURES
Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A) Fast switching speed: tf ≤ 0.3 µs MAX. (IC = 3 A) High DC current gain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse)
Note1
100 60 7.0 5.0 10 2.5 15 1.0
Note2
V V V A A A W
Note3
IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg
, 2.0
W °C °C
150 −55 to +150
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50% 2. Printing borard mounted 3. 7.5 mm x 0.7 mm, ceramic board mounted
Electrode Connection 1. Base 2. Collector 3. Emitter 4. Fin (collector)
2
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