HIRF730F

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF730 / HIRF730F N-CHANNEL POWER MOSFET HIRF730 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. www.DataSheet4U.com 2 3 1 Features Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF730 Series Symbol D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous) Drain to Current (Pulsed) (*1) Gate-to-Source Voltage (Continue) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy (*2) Avalanche Current (*1) Repetitive Avalanche Energy (*1) Peak Diode Recovery (*3) Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Parameter Value 400 5.5 22 ±20 74 38 0.58 0.3 290 5.5 7.4...