N-Channel Power MOSFET
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. :...
Description
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
HIRF740 Series Pin Assignment
Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Description
This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. www.DataSheet4U.com
2
3
1
Features
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
1
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3
2
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W
HIRF740 Series Symbol D G S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous)(VGS@10V, TC=25oC) Drain to Current (Continuous)(VGS@10V, TC=100 C) Drain to Current (Pulsed) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy*2 Avalanche Current
*1 *1 *1 o
Parameter
Value 400 10 6.3 40 ±20 74 38 0.59 0.3 520 10 13 4 -55 to 150 300
Units V A A A V W
Gate-to-Source Voltage (Continue)
PD
W/°C mJ A mJ V/ns °C °C
EAS IAR EAR dv/dt TJ,Tstg TL
Repetitive Avalanche Energy Peak Diode Recove...
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