DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1436A
NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON ...
DATA SHEET
SILICON
TRANSISTOR ARRAY
µPA1436A
NPN SILICON POWER
TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON
TRANSISTOR) INDUSTRIAL USE
DESCRIPTION
The µPA1436A is
NPN silicon epitaxial Darlington Power
Transistor Array that built in 4 circuits designed www.DataSheet4U.com for driving solenoid, relay, lamp and so on.
26.8 MAX. 4.0
PACKAGE DIMENSION (in millimeters)
FEATURES
Easy mount by 0.1 inch of terminal interval. High hFE for Darlington
Transistor. High Speed Switching. C-E Reverce Diode built in.
10
2.54
ORDERING INFORMATION
Part Number Package 10 Pin SIP Quality Grade Standard
1.4
0.6 ±0.2
1.4 0.5 ±0.2
µPA1436AH
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2 1 4 6 8 10 3 5 7 9
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (Ta = 25 ˚C) Total Power Dissipation (Tc = 25 ˚C) Junction Temperature Storage Temperature ** 4 Circuits Tj Tstg 150 –55 to +150 ˚C ˚C PT2** 28 W VCBO VEBO IC(DC) IC(pulse)* IB(DC) PT1** 150 100 8 ±3 ±5 0.3 3.5 V V V A/unit A/unit A/unit W
(B)
Collector to Emitter Voltage VCEO
(C)
R1
R2 (E)
PIN NO.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 5 kΩ R1 = .. 1.3 k...