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Purpose Transistors. S9014 Datasheet

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Purpose Transistors. S9014 Datasheet
















S9014 Transistors. Datasheet pdf. Equivalent













Part

S9014

Description

NPN General Purpose Transistors



Feature


S9014 NPN General Purpose Transistors TO -92 www.DataSheet4U.com 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE M AXIMUM RATINGS (Ta=25 C) Rating Collect or-Emitter Voltage Collector-Base Volta ge Emitter-Base Voltage Collector Curre nt Total Device Dissipation TA=25 C Jun ction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Val ue 45 50 5.0 100 0.
Manufacture

Weitron Technology

Datasheet
Download S9014 Datasheet


Weitron Technology S9014

S9014; .4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Char acteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector -Base Breakdown Voltage (IC= 100uAdc, I B=0) Emitter-Base Breakdown Voltage (IE = 100 uAdc, IC=0) Collector Cutoff Curr ent (VCB= 50 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0V d c, I C=0) Symbol V (BR)CEO V(BR)CBO V.


Weitron Technology S9014

(BR)EBO ICBO IEBO Min 45 50 5.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw S9014 Elect rical Characteristics (TA=25 C unless o therwise noted) (Countinued) Characteri stics Symbol Min WEITRON Max Unit On Characteristics DC Current Gain www.Dat aSheet4U.com (IC= 1mAdc, VCE=5Vdc) HFE VCE(sat) 60 1000 - Collector-Emitt er Saturation Volt.


Weitron Technology S9014

age (IC= 100 mAdc, IB= 5 mAdc) Base-Emit ter Saturation Voltage (IC= 100 mAdc, I B= 5 mAdc) Transition Frequency (IC= 10 mAdc, VCE= 5 Vdc, f=30MHz) - 0.3 Vd c VBE(sat) - 1 Vdc fT 150 - MHz CLASSIFICATION OF hFE Rank Range A 6 0-150 B 100-300 C 200-600 D 400-1000 WEITRON http://www.weitron.com.tw S9 014 www.DataSheet4U.com FIG.1 FIG.2 FIG.3 FIG.4 WEI.





Part

S9014

Description

NPN General Purpose Transistors



Feature


S9014 NPN General Purpose Transistors TO -92 www.DataSheet4U.com 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE M AXIMUM RATINGS (Ta=25 C) Rating Collect or-Emitter Voltage Collector-Base Volta ge Emitter-Base Voltage Collector Curre nt Total Device Dissipation TA=25 C Jun ction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Val ue 45 50 5.0 100 0.
Manufacture

Weitron Technology

Datasheet
Download S9014 Datasheet




 S9014
NPN General Purpose Transistors
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
S9014
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
23
Value
45
50
5.0
100
0.4
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 50 Vdc, IE=0)
Emitter Cutoff Current (VEB= 3.0Vdc, I C=0)
Symbol Min Max Unit
V(BR)CEO
45
-
Vdc
V(BR)CBO
V(BR)EBO
50
5.0
-
-
Vdc
Vdc
ICBO
IEBO
- 0.1 uAdc
- 0.1 uAdc
WEITRON
http://www.weitron.com.tw




 S9014
S9014
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
On Characteristics
Min
DC Current Gain
www.DataSh(IeCe=t41Um.coAmdc, VCE=5Vdc)
Collector-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 5 mAdc)
Base-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 5 mAdc)
Transition Frequency
(IC= 10 mAdc, VCE= 5 Vdc, f=30MHz)
HFE
VCE(sat)
VBE(sat)
fT
60
-
-
150
WEITRON
Max Unit
1000
0.3
1
-
-
Vdc
Vdc
MHz
CLASSIFICATION OF hFE
Rank
A
Range
60-150
B
100-300
C
200-600
D
400-1000
WEITRON
http://www.weitron.com.tw




 S9014
S9014
www.DataSheet4U.com
FIG.1
FIG.2
FIG.3
WEITRON
http://www.weitron.com.tw
FIG.4




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