M29DW128G

M29DW128G 128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory Data Brief Features ■ Supply voltage www.DataSheet4U.com – VCC = 2.7 to 3.6 V for Program, Erase and Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page width: 8 words – Page access: 25 ns – Random access: 60 ns Programming time – 15 µs per byte/word (typical) – 32-word write buffer Erase verify Memory blocks – Quadruple bank memory array: 16 Mbit+48 Mbit+48 Mbit+16 Mbit – Parameter blocks (at top and bottom) Dual operation – While Program or Erase in one bank, Read in any of the other banks Program/Erase Suspend and Resume modes – Read from any block during Program Suspend – Read and Program another block during Erase Suspend Unlock Bypass Program – Faster production/batch programming Common Flash interface – 64 bit security code 100,000 Program/Erase cycles per block TSOP56 (NF) 14 x 20 mm BGA ■ ■ ■ TBGA64 (ZA) 10 x 13 mm ■ ■ ■ Low power consumption – Standby and automatic standby Hardware block protection – VPP/WP pin for fast program and write protect of the four outermost parameter blocks Security features – Standard protection – Password protection – Additional block protection Extended memory block – Extra block used as security block or to store additional information Electronic signature – Manufacturer code: 0020h – Device code: 227Eh+2220h+2200h ECOPACK® packages available ■ ■ ■ ■ ■ ■ ■ ■ December 2007 Rev 2 1/11 www.numonyx.com ...