M29DW128F

M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Supply voltage www.DataSheet4U.com – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words – Page access: 25, 30ns – Random access: 60, 70ns Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes Program – 32-Word Write Buffer Erase Verify Memory blocks – Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit – Parameter Blocks (at Top and Bottom) Dual Operation – While Program or Erase in one bank, Read in any of the other banks Program/Erase Suspend and Resume modes – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend Unlock Bypass Program – Faster Production/Batch Programming Common Flash Interface – 64 bit Security Code 100,000 Program/Erase cycles per block ■ ■ ■ TSOP56 (NF) 14 x 20mm BGA ■ TBGA64 (ZA) 10 x 13mm Low power consumption – Standby and Automatic Standby Hardware Block Protection – VPP/WP Pin for fast program and write protect of the four outermost parameter blocks Security features – Standard Protection – Password Protection Extended Memory Block – Extra block used as security block or to store additional information Electronic Signature – Manufacturer Code: 0020h – Device Code: 227Eh + 2220h + 2200h ECOPACK® packages available ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ December 2007 Rev 8 1/94 www.numonyx.com 1...