BAP1321-01 Datasheet (data sheet) PDF





BAP1321-01 Datasheet, Silicon PIN diode

BAP1321-01   BAP1321-01  

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DISCRETE SEMICONDUCTORS DATA SHEET www. DataSheet4U.com M3D319 BAP1321-01 Sil icon PIN diode Preliminary specificatio n 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode FEATURES • High voltage, curren t controlled • RF resistor for RF att enuators and switches • Low diode cap acitance • Low diode forward resistan ce • Very low series inductance www.D ataSheet4U.com BAP1321-01 PINNING PIN DESCRIPTION cathode anode • For appl ications up to 3 GHz. handbook, halfpag e APPLICATIONS • RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD723A ultra small plastic SMD pa ckage. Marking code: K7 Fig.1 Simplif

BAP1321-01 Datasheet, Silicon PIN diode

BAP1321-01   BAP1321-01  
ied outline (SOD723A) and symbol. ; 2 1 2 Top view 1 MAM405 LIMITING VALUES In accordance with the Absolute Maximu m Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous re verse voltage continuous forward curren t total power dissipation storage tempe rature junction temperature Ts = 90 °C CONDITIONS MIN. − − − −65 −6 5 MAX. 60 100 315 +150 +150 UNIT V mA m W °C °C 2001 Nov 01 2 Philips Semi conductors Preliminary specification Silicon PIN diode ELECTRICAL CHARACTERI STICS Tj = 25 °C unless otherwise spec ified. SYMBOL VF IR www.DataSheet4U.com C d BAP1321-01 PARAMETER forward vol tage reverse leakage current diode capa citance CONDITIONS IF = 50 mA VR = 60 V VR = 20 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz TYP. 0 .95 − − 0.32 0.28 0.22 3.2 2.3 1.1 0.8 15.7 10.8 8.7 0.26 0.28 0.31 0.20 0 .23 0.25 0.15 0.18 0.21 0.10 0.13 0.16 MAX. 1.1 0.1 tbd − − 0.32 5.0 3.6 1.8 1.3 − − − − − − − − − − − − − − − − UNIT V µA µA pF pF pF Ω Ω Ω Ω dB d B dB dB dB dB dB dB dB dB dB dB dB dB d B µs rD diode forward resistance f = 100 MHz; note 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA |s21|2 isolat ion VR = 0; f = 900 MHz VR = 0; f = 18 00 MHz VR = 0; f = 2450 MHz |s21|2 insertion loss IF = 0.5 mA; f = 900 MHz IF = 0.5 mA; f = 1800 MHz IF = 0.5 mA;








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