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BAP142L Dataheets PDF



Part Number BAP142L
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description Silicon PIN diode
Datasheet BAP142L DatasheetBAP142L Datasheet (PDF)

BAP142L Silicon PIN diode Rev. 01 — 27 May 2004 Preliminary data sheet 1. Product profile 1.1 General description www.DataSheet4U.com Planar PIN diode in a SOD882 ultra small SMD plastic package. 1.2 Features s s s s s High voltage, current controlled RF resistor Low losses at very low currents Low diode capacitance Very low series inductance For applications up to 3 GHz. 1.3 Applications s RF attenuators and switches. 2. Pinning information Table 1: Pin 1 2 Discrete pinning Description cath.

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BAP142L Silicon PIN diode Rev. 01 — 27 May 2004 Preliminary data sheet 1. Product profile 1.1 General description www.DataSheet4U.com Planar PIN diode in a SOD882 ultra small SMD plastic package. 1.2 Features s s s s s High voltage, current controlled RF resistor Low losses at very low currents Low diode capacitance Very low series inductance For applications up to 3 GHz. 1.3 Applications s RF attenuators and switches. 2. Pinning information Table 1: Pin 1 2 Discrete pinning Description cathode anode 1 2 sym006 SOD882 Simplified outline [1] Symbol Transparent top view [1] Package marked by a masking bar. 3. Ordering information Table 2: Ordering information Package Name BAP142L Description Leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number Philips Semiconductors BAP142L Silicon PIN diode 4. Marking Table 3: BAP142L Marking Marking code E1 Type number 5. Limiting values www.DataSheet4U.com Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C Conditions Min −65 −65 Max 50 100 315 +150 +150 Unit V mA mW °C °C 6. Thermal characteristics Table 5: Symbol Rth(j-s) Thermal characteristics Parameter thermal resistance from junction to soldering point Conditions Typ 190 Unit K/W 7. Characteristics Table 6: Electrical characteristics Tj = 25 °C unless otherwise specified. Symbol VF IR Cd Parameter forward voltage reverse current diode capacitance Conditions IF = 50 mA VR = 50 V VR = 20 V f = 1 MHz; see Figure 2 VR = 0 V VR = 1 V VR = 20 V rD diode forward resistance f = 100 MHz; see Figure 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA 3.3 2.4 1.0 0.6 5.0 3.6 1.5 0.9 Ω Ω Ω Ω 0.26 0.23 0.17 0.35 0.25 pF pF pF Min Typ 0.95 Max 1.1 100 20 Unit V nA nA 9397 750 13056 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 27 May 2004 2 of 8 Philips Semiconductors BAP142L Silicon PIN diode Table 6: Electrical characteristics …continued Tj = 25 °C unless otherwise specified. Symbol s21 2 Parameter isolation Conditions VR = 0 V; see Figure 4 f = 900 MHz f = 1800 MHz f = 2450 MHz www.DataSheet4U.com Min - Typ 16.0 11.6 9.9 0.24 0.25 0.26 0.18 0.19 0.21 0.10 0.11 0.14 0.07 0.09 0.11 0.12 Max - Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB µs s21 2 insertion loss IF = 0.5 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 1 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 10 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz s21 2 insertion loss IF = 100 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 100 mA; f = 100 MHz LS series inductance - 0.6 - nH 9397 750 13056 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 27 May 2004 3 of 8 Philips Semiconductors BAP142L Silicon PIN diode 102 rD (Ω) 10 001aaa693 300 CD (fF) 200 001aaa694 www.DataSheet4U.com 1 100 10−1 10-1 1 10 IF (mA) 102 0 0 5 10 15 VR (V) 20 f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig 1. Forward resistance as a function of forward current; typical values. 0 s21 (dB) −0.2 2 (1) (2) (3) (4) Fig 2. Diode capacitance as a function of reverse voltage; typical values. 0 s21 (dB) −10 2 001aaa695 001aaa696 −0.4 −20 −0.6 −30 −0.8 −40 −1 0 1 2 f (GHz) 3 −50 0 1 2 f (GHz) 3 (1) IF = 100 mA. (2) IF = 10 mA. (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network; Tamb = 25 °C. Diode zero biased and inserted in a 50 Ω microstrip circuit; Tamb = 25 °C. Fig 3. Insertion loss (|s21|2) of the diode as a function of frequency; typical values. Fig 4. Isolation (|s21|2) of the diode as a function of frequency; typical values. 9397 750 13056 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 27 May 2004 4 of 8 Philips Semiconductors BAP142L Silicon PIN diode 8. Package outline Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882 L L www.DataSheet4U.com 1 2 b e1 A A1 E D (2) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e1 0.65 L 0.30 0.22 0.5 scale 1 mm Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17 Fig 5. Package outline. 9397 750 13056 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 27 May 2004 5 of 8 Philips Semiconductors BAP142L Sil.


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