Document
BAP142L
Silicon PIN diode
Rev. 01 — 27 May 2004 Preliminary data sheet
1. Product profile
1.1 General description
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Planar PIN diode in a SOD882 ultra small SMD plastic package.
1.2 Features
s s s s s High voltage, current controlled RF resistor Low losses at very low currents Low diode capacitance Very low series inductance For applications up to 3 GHz.
1.3 Applications
s RF attenuators and switches.
2. Pinning information
Table 1: Pin 1 2 Discrete pinning Description cathode anode
1 2
sym006 SOD882
Simplified outline
[1]
Symbol
Transparent top view
[1]
Package marked by a masking bar.
3. Ordering information
Table 2: Ordering information Package Name BAP142L Description Leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number
Philips Semiconductors
BAP142L
Silicon PIN diode
4. Marking
Table 3: BAP142L Marking Marking code E1 Type number
5. Limiting values
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Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C Conditions Min −65 −65 Max 50 100 315 +150 +150 Unit V mA mW °C °C
6. Thermal characteristics
Table 5: Symbol Rth(j-s) Thermal characteristics Parameter thermal resistance from junction to soldering point Conditions Typ 190 Unit K/W
7. Characteristics
Table 6: Electrical characteristics Tj = 25 °C unless otherwise specified. Symbol VF IR Cd Parameter forward voltage reverse current diode capacitance Conditions IF = 50 mA VR = 50 V VR = 20 V f = 1 MHz; see Figure 2 VR = 0 V VR = 1 V VR = 20 V rD diode forward resistance f = 100 MHz; see Figure 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA 3.3 2.4 1.0 0.6 5.0 3.6 1.5 0.9 Ω Ω Ω Ω 0.26 0.23 0.17 0.35 0.25 pF pF pF Min Typ 0.95 Max 1.1 100 20 Unit V nA nA
9397 750 13056
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 27 May 2004
2 of 8
Philips Semiconductors
BAP142L
Silicon PIN diode
Table 6: Electrical characteristics …continued Tj = 25 °C unless otherwise specified. Symbol s21 2 Parameter isolation Conditions VR = 0 V; see Figure 4 f = 900 MHz f = 1800 MHz f = 2450 MHz
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Min -
Typ 16.0 11.6 9.9 0.24 0.25 0.26 0.18 0.19 0.21 0.10 0.11 0.14 0.07 0.09 0.11 0.12
Max -
Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB µs
s21
2
insertion loss
IF = 0.5 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz
s21
2
insertion loss
IF = 1 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz
s21
2
insertion loss
IF = 10 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz
s21
2
insertion loss
IF = 100 mA; see Figure 3 f = 900 MHz f = 1800 MHz f = 2450 MHz
τL
charge carrier life time
when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 100 mA; f = 100 MHz
LS
series inductance
-
0.6
-
nH
9397 750 13056
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 27 May 2004
3 of 8
Philips Semiconductors
BAP142L
Silicon PIN diode
102 rD (Ω) 10
001aaa693
300 CD (fF) 200
001aaa694
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1 100
10−1 10-1
1
10 IF (mA)
102
0 0 5 10 15 VR (V) 20
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig 1. Forward resistance as a function of forward current; typical values.
0 s21 (dB) −0.2
2 (1) (2) (3) (4)
Fig 2. Diode capacitance as a function of reverse voltage; typical values.
0 s21 (dB) −10
2
001aaa695
001aaa696
−0.4
−20
−0.6
−30
−0.8
−40
−1 0 1 2 f (GHz) 3
−50 0 1 2 f (GHz) 3
(1) IF = 100 mA. (2) IF = 10 mA. (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network; Tamb = 25 °C.
Diode zero biased and inserted in a 50 Ω microstrip circuit; Tamb = 25 °C.
Fig 3. Insertion loss (|s21|2) of the diode as a function of frequency; typical values.
Fig 4. Isolation (|s21|2) of the diode as a function of frequency; typical values.
9397 750 13056
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 27 May 2004
4 of 8
Philips Semiconductors
BAP142L
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882
L
L
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1
2
b
e1
A A1
E
D
(2) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e1 0.65 L 0.30 0.22 0.5 scale 1 mm
Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17
Fig 5. Package outline.
9397 750 13056 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 27 May 2004
5 of 8
Philips Semiconductors
BAP142L
Sil.