LMBT2222ALT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT2222LT1 LMBT2222ALT1 3 1 www.DataSheet4U.com MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 2 2222 30 60 5.0 600 2222A 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR SOT– 23 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2 EMITTER RθJA PD ORDERING INFORMATION Device Package SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel RθJA TJ , Tstg LMBT2222LT1 LMBT2222LT1G SOT–23 LMBT2222ALT1 SOT–23 DEVICE MARKING LMBT2222LT1 = M1B; LMBT2222ALT1 = 1P LMBT2222ALT1G SOT–23 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector–Base Breakdown Voltage LMBT2222 LMBT2222A LMBT2222 V V I (BR)CBO V (BR)CEO 30 40 60 75 5.0 6.0 — — –– — — –– 10 Vdc Vdc Vdc nAdc µAdc (I C = 10 µAdc, I E = 0) LMBT2222A Emitter–Base B...