LMBT3904TT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. LMBT3904TT1 3 www.DataSheet4U.com ORDERING INFORMATION Device LMBT3904TT1 Package SC-89 Shipping 3000/Tape&Reel 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V CEO CBO EBO Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc SC-89 3 COLLECTOR IC 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RθJA PD 600 300 2.4 RθJA TJ , Tstg 400 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2 EMITTER DEVICE MARKING LMBT3904TT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc) Collector–Base Breakdown Voltage (I C = 10 µAdc) Emitter–Base Breakdown Voltage (I E = 10 µAdc) Base Cutoff Current ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current ( V CE = 30Vdc, V BE = 3.0Vdc ) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. I BL I CEX — — 50 50 nAdc nAdc V (BR)EBO 6.0 — Vdc V (BR)CEO V (BR)CBO 40 60 — — Vdc Vdc LMBT...