LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LMBT3906LT1
• Pb−Free Package May be Available. The...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
LMBT3906LT1
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
www.DataSheet4U.com ORDERING INFORMATION
Device LMBT3906LT1 Package SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel
1 2 3
SOT– 23 (TO–236AB)
LMBT3906LT1G SOT–23
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 40 – 40 – 5.0 – 200 Unit Vdc Vdc Vdc mAdc
3 COLLECTOR
1 BASE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) T A =25 °C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C R θJA PD Symbol PD Max 225 1.8 556 300 Unit mW mW/°C °C/W mW
2 EMITTER
DEVICE MARKING
LMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol V (BR)CEO – 40 V (BR)CBO – 40 V (BR)EBO – 5.0 I BL — I CEX — – 50 – 50 nAdc — nAdc — Vdc — Vdc Min Max Unit Vdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) Collector Cutoff Current (V CE = –30 Vdc, ...