Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
Device LMBT4401LT1 www.DataSheet4U.com Package SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel
1 2
LMBT4401LT1
3
LMBT4401LT1G SOT–23
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
Value 40 60 6.0 600
Unit Vdc Vdc Vdc mAdc
1
BASE
SOT–23
3
COLLECTOR
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
2
EMITTER
RθJA PD
RθJA TJ , Tstg
DEVICE MARKING
LMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V (BR)CEO 40 60 6.0 — — — Vdc — Vdc — µAdc 0.1 µAdc 0.1 Vdc (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage V (BR)CBO (I C = 0.1 mAdc, I E = 0) Emitter–Base Breakdown Voltage V (BR)EBO (I E = 0.1 mAdc, I C = 0) Base Cutoff Current I BEV (V CE = 35 Vdc, V EB = 0.4 Vdc) Collector Cutoff Current I CEX (V CE = 35 Vdc, V EB = 0.4 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
LMBT4401LT1–1/6
LESHAN RADIO COMPANY, LTD.
LMBT4401LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol hFE 20 40 80 100 40 VCE(sat) –– –– V
BE(sat)
Min
Max
Unit ––
ON CHARACTERISTICS ( 3 )
DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 2.0 Vdc) Collector–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) –– –– –– 300 –– Vdc 0.4 0.75 Vdc 0.75 –– 0.95 1.2
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SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) Collector–Base Capacitance (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) fT 250 C cb –– C eb –– h ie 1.0 h re 0.1 h fe 40 h oe 1.0 30 500 µmhos 8.0 — 15 X 10
–4
MHz –– pF 6.5 pF 30 kΩ
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (V CC = 30 Vdc, V EB.