LMBT5087LT1

LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 LMBT5087LT1 ORDERING INFORMATION 1 Device LMBT5087LT1 Package SOT–23 Shipping 3000/Tape & Reel 3000/Tape & Reel 2 LMBT5087LT1G SOT–23 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 50 – 50 – 3.0 – 50 Unit Vdc Vdc Vdc mAdc 3 COLLECTOR 1 BASE DEVICE MARKING LMBT5087LT1=2Q 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 417 –55to+150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R θJA T J , T stg ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol V (BR)CEO V (BR)CBO I CBO — — –10 –50 Min – 50 – 50 Max — — Unit Vdc Vdc n Adc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) Collector Cutoff Current (V CB = –10 Vdc, I E= 0) (V CB = –35 Vdc, I E= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M17–1/6 LESHAN RADIO COMPANY, LTD. L MBT5087LT1 ELECT...