IXTP2N60P Datasheet (data sheet) PDF





IXTP2N60P Datasheet, PolarHV Power MOSFET

IXTP2N60P   IXTP2N60P  

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PolarHVTM Power MOSFET N-Channel Enhance ment Mode Avalanche Rated IXTP 2N60P I XTY 2N60P VDSS ID25 RDS(on) = 500 = 2 ≤ 5.1 V A Ω Symbol VDSS VDGR VG SS VGSM ID25 IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Con ditions TJ = 25° C to 150° C TJ = 25 C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pul se width limited by TJM TC = 25° C TC =

IXTP2N60P Datasheet, PolarHV Power MOSFET

IXTP2N60P   IXTP2N60P  
25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C , RG = 50 Ω TC = 25° C Maximum Rati ngs 600 V 600 V ± 30 ± 40 2 4 2 10 15 0 10 55 -55 ... +150 150 -55 ... +150 V V A A A mJ mJ V/ns TO-220 (IXTP) G D S (TAB) TO-252 AA (IXTY) G W °C °C °C °C °C G = Gate S = Source S (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-220








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