SGM2N60UF
IGBT
SGM2N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors...
SGM2N60UF
IGBT
SGM2N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching losses. www.DataSheet4U.com The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
D
C
S G
G E
SOT-223
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
TC = 25°C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Collector Current @ TC = 100°C Pulsed Collector Current Maximum Power Dissipation @ Ta = 25°C - Derate above 25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
SGM2N60UF 600 ± 20 2.4 1.2 10 2.1 0.017 -55 to +150 -55 to +150 300
Units V V A A A W W/°C °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. -Max. 60 Units °C/W
Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev.A
SGM2N60UF
Electrical Characteristics of the IGBT T
Symbol Parameter...