K192A

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · High power gain: GPS = 24dB (typ.) (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -18 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1D Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure IGSS VGS = -1.0 V, VDS = 0 V (BR) GDO IG = -100 mA IDSS (Note) VGS = 0, VDS = 10 V VGS (OFF) VDS = 10 V, ID = 1 mA ïYfsï VGS = 0, VDS = 10 V, f = 1 kHz Ciss Crss GPS VDS = 10 V, VGS = 0, f = 1 MHz VGD = -10 V, f = 1 MHz VDD = 10 V, f = 100 MHz (Figure 1) NF VDD = 10 V, f = 100 MHz (Figure 1) Note: IDSS classification Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0 Min Typ. Max Unit ¾ ¾ -10 nA -18 ¾ ¾ V 3 ¾ 24 mA -1.2 -3 ¾ V ¾ 7 ¾ mS ¾ 3.5 ¾ pF ¾ ¾ 0.65 pF ¾ 24 ¾ dB ¾ 1.8 3.5 dB 1 2003-04-04 2SK192A L1: 0.8 mmf Ag plated Cu wire 3 turns, 10 mm ID, 10 mm length L2: 0.8 mmf Ag plated Cu wire 3.5 turn...